JPS6222457B2 - - Google Patents

Info

Publication number
JPS6222457B2
JPS6222457B2 JP54070339A JP7033979A JPS6222457B2 JP S6222457 B2 JPS6222457 B2 JP S6222457B2 JP 54070339 A JP54070339 A JP 54070339A JP 7033979 A JP7033979 A JP 7033979A JP S6222457 B2 JPS6222457 B2 JP S6222457B2
Authority
JP
Japan
Prior art keywords
base
transistor
wiring
inverter transistor
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54070339A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55162261A (en
Inventor
Kimimaro Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP7033979A priority Critical patent/JPS55162261A/ja
Publication of JPS55162261A publication Critical patent/JPS55162261A/ja
Publication of JPS6222457B2 publication Critical patent/JPS6222457B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP7033979A 1979-06-05 1979-06-05 Semiconductor ic device Granted JPS55162261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7033979A JPS55162261A (en) 1979-06-05 1979-06-05 Semiconductor ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7033979A JPS55162261A (en) 1979-06-05 1979-06-05 Semiconductor ic device

Publications (2)

Publication Number Publication Date
JPS55162261A JPS55162261A (en) 1980-12-17
JPS6222457B2 true JPS6222457B2 (en]) 1987-05-18

Family

ID=13428551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7033979A Granted JPS55162261A (en) 1979-06-05 1979-06-05 Semiconductor ic device

Country Status (1)

Country Link
JP (1) JPS55162261A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206171A (ja) * 1982-05-26 1983-12-01 Nec Corp 半導体集積回路装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5381093A (en) * 1976-12-27 1978-07-18 Fujitsu Ltd Multiinput-multioutput iil
JPS53105384A (en) * 1977-02-25 1978-09-13 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS55162261A (en) 1980-12-17

Similar Documents

Publication Publication Date Title
US5338986A (en) Latch-up resistant CMOS output circuit
JPS601980B2 (ja) 自動リセット回路
JPS586416B2 (ja) ヒステリシス特性を有する限界回路
JPS6222457B2 (en])
US5418386A (en) Circuit construction for controlling saturation of a transistor
JPH10190426A (ja) 半導体装置用高耐圧プッシュプル出力回路
KR860000799B1 (ko) 스위치 회로
JPH0795015A (ja) 半導体集積回路
US4703455A (en) Bipolar programmable memory and method
JPH0124377B2 (en])
JP3067311B2 (ja) 出力端子の電位の制御に応じて複数の入力信号の1つを選択する方法及び出力回路
JP3179211B2 (ja) 半導体集積回路装置
EP0246371B1 (en) Integrated injection logic output circuit
JPS5912824Y2 (ja) トランジスタ回路
JP2811740B2 (ja) 集積回路
JPH06105070B2 (ja) 半導体スイッチング回路
JPH0964281A (ja) 集積回路の静電気保護回路
JP2797621B2 (ja) コンパレータ回路
JPS639410B2 (en])
JPH0381325B2 (en])
JPH01272306A (ja) 電流源回路用起動回路
JPH09232440A (ja) 半導体集積回路装置
JPH01292906A (ja) 電流検出回路
JPS60223220A (ja) I2l回路のインジエクタ電流供給回路
JPS5954330A (ja) 電流切換え論理回路